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Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly lumine...

Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly lumine...

Tungsten disulfide (2H-WS2) crystals are extremely rare in nature and are less t...

Years of growth optimization lead to our flawless n-type MoS2 crystals through A...

Zirconium disulfide (ZrS?) is an indirect gap layered semiconductor in the bulk ...

More than a decade of growth optimization in chemical vapor transport (CVT) as w...

Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, ex...

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band ...

NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's ma...

14 years of growth optimization in chemical vapor transport (CVT) as well as flu...

Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly lumine...

Our TiS2 crystals are stabilized in 1T ohase (semimetallic phase). They are grow...

Single crystal ReS? (Rhenium disulfide) crystals are developed at our facilities...

14 years of growth optimization in chemical vapor transport (CVT) as well as flu...

Hafnium disulfide (HfS?) is an indirect gap layered semiconductor in the bulk an...

Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed...

More than a decade of growth optimization in chemical vapor transport (CVT) as w...

Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical...